the number of microscopic defects in the substrates

The new 60 Die LED array family is offered in varying wavelengths with typical peak wavelengths of 405, 470, 525, 610, 830 and 870 nm, respectively. Customized, wider (higher) temperature versions of the 60 Die led high bay light are also available upon request.Ideal for tasks that require a narrower and brighter center working beam, the 60 Die LEDs are perfect for long range illumination, such as covert aircraft landing lights. Other applications for the reliable, narrow angle LEDs include fluorescence and photo dynamic therapy. Storage and operating temperatures range from -55 degrees to 100 degrees C with a maximum junction temperature of 100 degrees C and a thermal resistance J-C parameter of 3 degrees C/W, typical.

Opto Diode Corporation was established in 1981 with the mission to supply the highest output IRLED’s in the world. The company has since branched out to offer high power visible LED’s, LED arrays, silicon photodiodes and gallium aluminum arsenide photodiodes. Typical applications for Opto Diode’s products include photo-electric controls; medical, scientific and industrial florescence; guided missile systems, ophthalmology, LED based tracking systems for surgery, vending machines and aviation lighting.

Gallium nitride (GaN) is critical semi-conductive material for the production of compact and highly efficient green, blue, violet, and ultraviolet light sources. They form the basis for green and white LEDs as well as blue laser diodes. More importantly, GaN-based white led high bay light used for general lighting will become a highly efficient, non-toxic replacement for fluorescent and incandescent bulbs, yielding energy savings equivalent to over 5 billion barrels of oil over the next 20 years, according to the U.S. Dept. of Energy (DOE).Our proprietary crystal growth techniques significantly reduce the number of microscopic defects in the substrates, which will enable our customers to realize improved yields in their device production processes”, says Paul Fini, Chief Technology Officer at Inlustra. The company is currently offering non-polar GaN substrate sizes between 5x10mm and 10x20mm but will scale up its process to 2” over the next 9 - 12 months.